Memory performance of MOS structure embedded with laser annealed gold NCs

摘要

Memory devices having the structure of n-Si(1 0 0)/SiO2/metal nanocrystals (NCs)/Y2O3/Au were fabricated and their structural and electrical characteristics have been studied extensively. Gold nanoparticles were formed via laser annealing (LA) of a thin Au layer. The aim was to investigate the use of laser annealing as an effective method to produce NC-based memory devices. In particular, laser annealing was used in order to obtain uniformly spaced NCs with an average diameter of 20 nm. Best results for Au NCs were obtained using fluence below 500 mJ/cm(2) and a small number of laser pulses (1-5). After structural characterization using SEM, electrical characterization involving capacitance-voltage and current-voltage measurements revealed good (dis-) charging behavior and memory windows around 3 V. The analysis of the experimental data showed that LA is a promising annealing technique to realize devices with electrical characteristics suitable for future memory devices.