Comparison of dual-k spacer and single-k spacer for single NWFET and 3- stack NWFET

Hyungwoo Ko; Jongsu Kim; Minsoo Kim; Myounggon Kang; Hyungcheol Shin

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Comparison of dual-k spacer and single-k spacer for single NWFET and 3- stack NWFET

机译：单NWFET和3堆叠NWFET的双k隔离物和单k隔离物的比较

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摘要

Abstract

The investigation of the Dual-kspacer through comparative analysis of single nanowire-FET(NWFET)/3-stack NWFET and underlap/overlap channel is conducted. It is known that the dug 3-stack NWFET has better delay characteristics than single NWFET with the use of high permittivity material of Cinin Dual-kspacer structure. In addition, there is no difference of delay between overlap and underlap channel when it used Dual-k spacer structure but underlap channel of Dual-k 3-stack NWFET shows better short channel immunity.

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摘要

通过对单个纳米线FET的比较分析，对Dual- k 垫片的研究（ NWFET）/ 3叠NWFET和下叠/上叠通道进行。众所周知，在Dual- in 的高介电常数材料，挖出的3叠NWFET具有比单NWFET更好的延迟特性。 > k 间隔结构。此外，使用Dual-k间隔结构时，重叠和下重叠沟道之间的延迟没有差异，但是Dual-k 3堆叠NWFET的下重叠沟道表现出更好的短沟道抗扰性。

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来源
《Solid-State Electronics》 |2018年第2期|64-68|共5页
作者
Hyungwoo Ko; Jongsu Kim; Minsoo Kim; Myounggon Kang; Hyungcheol Shin;
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作者单位

Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University;

Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University;

Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University;

Department of Electronics Engineering, Korea National University of Transportation;

Inter-University Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
Dual-kspacer; Underlap channel; Nanowire-FET; High-to-low propagation delay; Intrinsic gate delay;

机译：Dual-kspacer;Underlap通道;Nanowire-FET;高到低传播延迟;固有栅极延迟;

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Comparison of dual-k spacer and single-k spacer for single NWFET and 3- stack NWFET

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