Analysis of 0.5μm channel Al/WSx/Poly-Si gate performance in high-frequency band Si power MOSFETs with process/device/circuit continuous simulation

M. Kataoka; K. Komuro; K. Fujita

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Analysis of 0.5μm channel Al/WSx/Poly-Si gate performance in high-frequency band Si power MOSFETs with process/device/circuit continuous simulation

机译：通过过程/器件/电路连续仿真分析高频带Si功率MOSFET中0.5μm沟道Al / WSx / Poly-Si栅极的性能

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0.5μm channel Al/WSix/Poly-Si gate performance in high-frequency (900 MHz and 1.9 GHz) band Si power MOSFETs is analyzed with Process/Device/Circuit continuous simulation. In case the upper Al electrode is separated enough from the most heated channel (the WSix/Poly-Si gate height is more than 400 nm), the confirm that the Al/WSix/Poly-Si gate can be performed well even in the large-signal operation at the high frequencies.

机译：通过过程/器件/电路连续仿真分析了在高频（900 MHz和1.9 GHz）带状Si功率MOSFET中0.5μm沟道Al / WSix / Poly-Si栅极性能。如果上部的Al电极与最热的通道隔开足够的距离（WSix / Poly-Si栅极高度大于400 nm），则可以确认即使在较大的Al中，Al / WSix / Poly-Si栅极也可以很好地执行-高频信号操作。

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《Solid-State Electronics》 |1999年第9期|1689-1694|共6页
作者
M. Kataoka; K. Komuro; K. Fujita;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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入库时间 2022-08-18 00:44:41

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Analysis of 0.5μm channel Al/WSx/Poly-Si gate performance in high-frequency band Si power MOSFETs with process/device/circuit continuous simulation

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