Low-frequency gate current noise of InP based HEMTs

摘要

The low-frequency 1/f noise in the gate current I_G of InP based HEMTs is studied for a broad range of operation conditions. When the Schottky barrier is in reverse operation, the corresponding gate current noise spectral density S_IG shows an I~n_G law, with n≈2 for not too large drain bias. For sufficiently large gate bias, the Schottky barrier becomes forward biased and the corresponding noise intensity tends to be proportional t the gate current. These results will be compared with existing theories in order to assess the responsible mechanisms. From the gate current dependence of the corresponding noise spectral density, it is derived that generation-recombination noise by traps in the Schottky barrier layer is responsible for the 1/f noise.