Tunnelling-assisted generation-recombination in pn a-Si juncitons

摘要

A theoretical model is developed describing the trap-assisted tunnelling capture and emission mechanisms in amorphous silicon pn junctions. Adding these transitions to a pure thermal capture-emission mechanism gives expressions for the nonequilibrium occupancy function. Integrating over all states in the gap of an amorphous semiconductor, the equations for the generation-recombination rate are obtained, taking into account not only the thermal capture-emission process, but also the tunnelling transport of charge carriers and the enhanced carrier transport due to the Polle-Frenkel effect.