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首页> 外文期刊>Solid-State Electronics >Comparison of floating probe transient technique for on-state channel characterization & threshold voltage of an organic thin film transistor for sensing applications
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Comparison of floating probe transient technique for on-state channel characterization & threshold voltage of an organic thin film transistor for sensing applications

机译:用于传感应用的有机薄膜晶体管的浮动探针瞬态技术的浮动探针瞬态技术与阈值电压

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摘要

For pragmatic utilizations of field-effect transistors (FETs), the control of threshold voltage (Vth) is significant for sensing applications as various sensors and circuits require distinctive electrical characteristics. Moreover, the controllable threshold voltage is essential for creating integrated circuits (IC). The threshold voltage of a TFT is sensitive to numerous factors, which make it alluring for sensing applications. However, its estimation is not simple, particularly when mobility is field-dependent and source/drain resistances are noteworthy. Precise control of the threshold voltage in organic FETs also remains challenging. Conventionally, for an organic transistor threshold voltage is typically an empirical parameter that is obtained by fitting the experimental current-voltage transfer characteristics, which is temperamental as it relies upon the range of the gate bias. However, the turn-on voltage of a transistor is not affected from these downsides and therefore suggests an alternative that can be used for sensing applications. Customary, measurement of on-state voltage requires the estimation of current in the subthreshold region and its extrapolation at the voltage axis, which it is normally not utilized. The present work analyzes the threshold voltage extracted using differential and conventional methods and the turn-on voltage extracted using the floating probe technique which is straightforward and requires the estimation of voltage at the floating terminal as the source voltage is linearly sloped while sustaining gate voltage constant. Two-dimensional numerical simulation results are introduced to support that the floating probe procedure yields reliable parameters than the threshold voltage and subsequently can be suitably used for sensing applications. Experimental results obtained with pentacene based top-contact organic TFT's (OTFTs) are also shown to delineate the proposed idea.
机译:对于场效应晶体管(FET)的语用利用,阈值电压(Vth)的控制对于传感应用对于各种传感器和电路需要独特的电气特性,这是显着的。此外,可控阈值电压对于创建集成电路(IC)是必不可少的。 TFT的阈值电压对众多因素敏感,这使得其诱使感测应用。然而,其估计并不简单,特别是当移动性是现场依赖性的,并且源/漏电是值得注意的。精确地控制有机FET中的阈值电压也保持具备挑战性。传统上,对于有机晶体管阈值电压通常是通过拟合实验电流 - 电压传递特性而获得的经验参数,这是依赖于栅极偏置的范围的气体。然而,晶体管的导通电压不受这些缺陷的影响,因此建议可以用于传感应用的替代方案。常规,导通状态的测量需要在亚阈值区域中的电流估计,并且在电压轴上的外推,该电压轴通常不使用该电压轴。本工作分析了使用差分和传统方法提取的阈值电压,并且使用浮动探针技术提取的开启电压,这是简单的,并且需要在源电压估计浮动端子处的电压,同时保持栅极电压恒定的栅极倾斜。引入二维数值模拟结果以支持浮动探针程序比阈值电压产生可靠的参数,随后可以适合用于感测应用。含有五价基顶部接触有机TFT(OTFT)获得的实验结果也显示出拟议的想法。

著录项

  • 来源
    《Solid-State Electronics》 |2020年第11期|107904.1-107904.9|共9页
  • 作者

    Agarwal Rajesh;

  • 作者单位

    SRM Inst Sci & Technol Dept Elect & Commun Engn Kattankulathur 603203 Tamilnadu India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Pinch off; Sensor; Threshold voltage; Organic; OTFT;

    机译:捏;传感器;阈值电压;有机;OTFT;

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