机译:厚度控制剥落工艺制造柔性CMOS器件电气特性研究
Kyungpook Natl Univ Sch Elect & Elect Engn Daegu 41566 South Korea;
Kyungpook Natl Univ Sch Elect & Elect Engn Daegu 41566 South Korea;
Kyungpook Natl Univ Sch Elect & Elect Engn Daegu 41566 South Korea;
Kyungpook Natl Univ Sch Elect & Elect Engn Daegu 41566 South Korea;
Kyungpook Natl Univ Sch Elect & Elect Engn Daegu 41566 South Korea;
Kyungpook Natl Univ Sch Elect & Elect Engn Daegu 41566 South Korea;
Kyungpook Natl Univ Sch Elect & Elect Engn Daegu 41566 South Korea;
Pohang Univ Sci & Technol POSTECH Dept Creat IT Engn Pohang 37673 South Korea;
Gachon Univ Dept Elect Engn Seongnam 13120 South Korea;
Kyungpook Natl Univ Sch Elect & Elect Engn Daegu 41566 South Korea;
Thickness-controlled layer separation; Spalling technique; flexible CMOS devices; Residual stress; CMOS performance; Separated layer thickness;
机译:横向源/漏结控制制造的低于10nm平面体CMOS器件的特性和建模
机译:使用在100摄氏度的极低温度下制造的氧化钛材料改善机械柔韧性薄膜器件的介电柔韧性和电性能
机译:通过CMOS兼容工艺制造的光子晶体慢光器件
机译:使用原子3D工艺/器件仿真器研究低于100 nm CMOS的实际掺杂剂波动引起的器件特性变化
机译:基于future的多金属高k栅极电介质的电气和材料特性,可用于未来的规模化CMOS技术:物理,可靠性和工艺开发。
机译:溶液法制备双层ZnO / In2O3薄膜晶体管的电学特性研究
机译:通过解决方案加工制造的双层ZnO / In2O3薄膜晶体管电气特性研究
机译:完全消耗硬质合金(C3)介质隔离工艺制备si器件的电学特性