Scalable compact modeling of trap generation near the EB spacer oxide interface in SiGe HBTs

摘要

This paper presents a physics-based scalable formulation for interface trap generation in the vicinity of the emitter-base spacer oxide interface in advanced SiGe HBTs. Aging tests were performed for various emitter dimensions to investigate the scalability of the dynamics of hot-carrier degradation. An improved formulation of the bond dissociation rate is also proposed incorporating a scaling rule depending on the avalanche current density. The hydrogen diffusion through the EB spacer has been modeled using an RC ladder network and has been scaled according to the hydrogen diffusion volume. Its accuracy has been validated over a wide range of aging tests and various geometry features.