Experimental and simulation investigation of the out-of-equilibrium phenomena on the pseudo-MOSFET configuration under transient linear voltage ramps

摘要

The pseudo-MOSFET configuration is an electrical characterization technique developed for silicon-on-insulator (SOI) wafers. The wide variety of experiments that have been performed to date have also extended recently in the study of out-of-equilibrium phenomena for bio-sensing applications. However, the lack of a full understanding of the ohmic contact behaviour between the probes and the low doped silicon film results in simulation inconsistencies. This work proposes a simulated device structure that is capable of reproducing the behaviour of the device and further extends the experiments into large-signal linear ramps which are also reproduced through simulations.