Novel on-resistance based methodology for MOSFET electrical characterization

摘要

A new methodology for MOSFET characterization making use of the on-resistance characteristics R-on(V-g, V-d) = V-d/I-d(V-g, V-d) and associated derivatives dR(on)/dV(g) and dR(on)/dV(d) is proposed. This approach enables to eliminate the influence of source-drain series resistance R-sd not only in linear region but also in non-linear region of MOSFET operation. Therefore, it allows for intrinsic MOSFET parameter extraction free from source and drain series resistance.