机译:所有MOCVD生长的Al_(0.7)Ga_(0.3)N / Al_(0.5)Ga_(0.5)N HFET:一种与富AlAlGaN沟道晶体管进行欧姆接触的方法
Ohio State Univ Elect & Comp Engn Dept Columbus OH 43210 USA;
Univ South Carolina Elect Engn Dept Columbia SC 29208 USA;
Aluminum gallium nitride; Ultra-wide band gap; Ohmic contacts; RF transistor;
机译:(Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P /(Al_(0.3)Ga_(0.7))_(0.5)In_(0.5)P多重量子垒超晶格的研究断面扫描隧道显微镜
机译:稀Al_(0.3)Ga_(0.7)As / In_(0.3)Ga_(0.7)As_(0.99)N_(0.01)/ GaAs异质结构场效应晶体管(HFET)的高稳定热特性研究
机译:分子束外延生长的GaN / Al_(0.5)Ga_(0.5)N多量子阱的蓝光发射,其扰动层为Al_(0.5)Ga_(0.5)N单层
机译:用于传导子带自旋 - GaAs / AL_(0.3)GA_(0.7)的紧密绑定方法为和IN_(0.7)GA_(0.3)AS / IN_(0.7)AL_(0.3)作为超晶格
机译:18.(Ga_ <0.5> Al_ <0.5>)As薄膜的结构分析(名古屋大学工学部用物理学cult攻,硕士论文摘要(1985年))