Bulk n-channel MOSFETs with buried stressor at the 28 nm process node

摘要

We report for the first time the implementation of SiGe buried stressors in a foundry production process at 28 nm and the observation of an additional benefit of improved short channel behavior (reduced DIBL) that results in at least 15% improvement in Idlin-Ioff independent of any benefit obtained from tensile strain. For RF applications, f(T) is projected to improve by at least 40% in n-MOSFETs with SiGe buried stressor.