Design guideline of tunnel field-effect transistors (TFETs) considering negative differential transconductance (NDT)

摘要

A gate-normal tunnel field-effect transistor (TFET) showing negative differential transconductance (NDT) and its design guideline are proposed. The introduction of the source depletion to the gate-normal TFETs leads to negative differential transconductance. It is also confirmed that the NDT of the proposed gate-normal TFET is successfully enhanced by modulating gate-induced source depletion effects.