Input-modulating adaptive neuron circuit employing asymmetric floating- gate MOSFET with two independent control gates

摘要

In this paper, we present an input-modulating adaptive neuron circuit employing a floating-gate MOSFET (FG-MOSFET) with two asymmetrically shaped control gates. The proposed FG-MOSFET is utilized as key element for implementing neural adaptation in integrate-and-fire (I&F) neuron circuit. To confirm current modulating capability of proposed device, an adjustable-gain current mirror employing the device is simulated as well. Adaptive neuron circuit presented in this paper successfully exhibits spike-triggered adaptation with ratio between maximum and minimum firing rate ranging from 7.97 to 18.4. Compared to conventional researches, adaptive neuron circuit proposed in this paper allows more versatile operation and easier fabrication due to utilization of out FG-MOSFET.