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High pressure X-ray diffraction and electrical resistance study of the quasi- one-dimensional sulfide InV6S8

机译:准一维硫化物InV6S8的高压X射线衍射和电阻研究

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The ambient structural details and the results of room temperature high pressure angle dispersive X-ray diffraction and electrical resistance measurements on the quasi-one-dimensional sulfide, InV6S8, to a pressure of 25 GPa are reported. The material does not undergo a phase transition in this pressure range, though an anomaly in the c/a ratio has been observed around 10 Gpa. A fit of the Murnaghan equation of state to the V/V-0 versus pressure data, with the value of the derivative of B-0 with respect to pressure, B'(0), fixed at 4 has yielded a value of the bulk modulus, B-0, of 110 GPa. We also present data of the pressure dependence of the lattice constants, a and c, the ratio c/a, and the resistance at room temperature. (C) 2004 Elsevier Ltd. All rights reserved.
机译:报告了周围结构细节以及室温高压角色散X射线衍射和准一维硫化物InV6S8在25 GPa压力下的电阻测量结果。尽管在10 Gpa左右已观察到c / a比异常,但该材料在此压力范围内未经历相变。 Murnaghan状态方程对V / V-0与压力数据的拟合,其中B-0相对于压力的导数B'(0)的值固定为4,得出了体积的值模量B-0为110 GPa。我们还提供了晶格常数,α和c,比率c / a和室温下的电阻的压力依赖性数据。 (C)2004 Elsevier Ltd.保留所有权利。

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