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首页> 外文期刊>Solid State Communications >Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells
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Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells

机译:掺锌GaN和InN中弹性常数的压力依赖性及其对立方InGaN / GaN量子阱中发光压力系数的影响

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摘要

We have studied the influence of nonlinear elastic effects on the pressure coefficients of light emission, dE_E/dP, in cubic InGaN/GaN quantum wells. By means of ab-initio calculations, we have determined the pressure dependences of the elastic constants, C_(11), C_(12) and C_(44) in zinc-blende InN and GaN. Further, we show that the pressure dependence of the elastic constants results in significant reduction of dE_E/dP in cubic InGaN/GaN quantum wells and essentially improves the agreement between experimental and theoretical values.
机译:我们研究了立方InGaN / GaN量子阱中非线性弹性效应对光发射压力系数dE_E / dP的影响。通过从头算,我们确定了闪锌矿InN和GaN中弹性常数C_(11),C_(12)和C_(44)的压力依赖性。此外,我们表明,弹性常数的压力依赖性导致立方InGaN / GaN量子阱中dE_E / dP的显着降低,并从根本上改善了实验值与理论值之间的一致性。

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