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Edge current switch of two-dimensional electron gas using carrier density control

机译:利用载流子密度控制的二维电子气边缘电流开关

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We have investigated the effects of electron density discontinuity on the transports of edge currents of two-dimensional electron gas (2DEG). The electric field applied to a gate, which covers the 2DEG partially, gives rise to change in the carrier density and results in a density gradient, which deforms the edge currents. The transverse and longitudinal resistances were measured as functions of gate voltage V_G in the quantum Hall regime. The deviations of the longitudinal resistances from the normal quantum Hall resistances are attributed to the reflections of the edge currents under the influence of the abrupt density discontinuity. A switching behavior of the transverse resistance by controlling the gate voltage was observed when V_G = -2.2 and - 2.0 V for magnetic field H = 5 and 7.2 T, respectively.
机译:我们已经研究了电子密度不连续性对二维电子气(2DEG)边缘电流传输的影响。施加到部分覆盖2DEG的栅极的电场会引起载流子密度的变化,并导致密度梯度变化,从而使边缘电流变形。在量子霍尔状态下,测量横向和纵向电阻与栅极电压V_G的关系。纵向电阻与正常量子霍耳电阻的偏差归因于在突然的密度不连续性的影响下边缘电流的反射。当磁场H = 5和7.2 T时,分别通过V_G = -2.2和-2.0 V观察到通过控制栅极电压产生的横向电阻的开关行为。

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