Properties of vanadium-doped SrBi_4Ti_4O_(15) ferroelectric ceramics

摘要

Using the standard solid-state reaction method, several vanadium-doped ferroelectric ceramics of type SrBi_(4-x/3)Ti_(4-x)V_xO_(15) (SBTV - x) were synthesized. The vanadium doping content, x, rangs from 0.00 to 0.06. The crystal structure of SrBi_4Ti_4O_(15) is not affected by V-doping. The electric breakdown voltage of the samples increases with V content. Meanwhile, V-doping results in a notable enlargement of remnant polarization (2P_r). The 2P_r of STBV - 0.03 reaches a very large value, which is over 50 μC/cm~2 and is nearly twice greater than that at zero doping. The Curie temperatures of V-doped samples decrease slightly in comparison with that of SrBi_4Ti_4O_(15). V-doping can improve the electric properties of SrBi_4Ti_4O_(15) without sacrificing its thermal stableness.