Low temperature phase transition in ZnSe doped with nickel

Victor I. Sokolov; Sergey F. Dubinin; Sergey G. Teploukhov; Vitaliy D. Parkhomenko; Alexander T. Lonchakov; Vladimir V. Gudkov; Alexander V. Tkach; Irina V. Zhevstovskikh; Nikita B. Gruzdev

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Low temperature phase transition in ZnSe doped with nickel

机译：掺杂镍的ZnSe中的低温相变

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摘要

Neutron diffraction and ultrasonic experiments as well as measurements of heat conductivity in ZnSe and Zn_(1-x)Ni_xSe (x = 0.0025) semiconductors have been carried out. As a result, a structural transition induced by Ni impurity has been found at T_c = 14.5 K.

机译：已经进行了中子衍射和超声实验以及ZnSe和Zn_（1-x）Ni_xSe（x = 0.0025）半导体中热导率的测量。结果，在T_c = 14.5 K处发现了由Ni杂质引起的结构转变。

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来源
《Solid State Communications》 |2004年第8期|p.507-510|共4页
作者
Victor I. Sokolov; Sergey F. Dubinin; Sergey G. Teploukhov; Vitaliy D. Parkhomenko; Alexander T. Lonchakov; Vladimir V. Gudkov; Alexander V. Tkach; Irina V. Zhevstovskikh; Nikita B. Gruzdev;
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作者单位

Institute for Metal Physics, Ural Department of the Russian Academy of Science, 620219 Ekaterinburg, Russian Federation;

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正文语种 eng
中图分类固体物理学;
关键词
C. impurities in semiconductors; D. phase transition; D. heat conduction; E. neutron scattering; E. ultrasonics;

机译：C.半导体中的杂质;D.相变;D.导热;E.中子散射;E.超声波;

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8. Low Temperature Specific Heat Measurements of Aluminum Doped with Nickel and Alkali Halides Doped with Nitrite. Report No. 1759. [R] . helmle,leland charles 1972

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Low temperature phase transition in ZnSe doped with nickel

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