Electronic parameters and electronic structures in modulation-doped highly strained In_xGa_(1-x)As/In_yAl_(1-y)As coupled double quantum wells

摘要

Electronic parameters of a two-dimensional electron gas (2DEG) in modulation-doped highly strained ln_xGa_(1-x)As/In_y- Al_(1-y)As coupled double quantum wells were investigated by performing Shubnikov-de Haas (S-dH), Van der Pauw Hall-effect, and cyclotron resonance measurements. The S-dH measurements and the fast Fourier transformation results for the S-dH at 1.5 K indicated the electron occupation of two subbands in the quantum well. The electron effective masses of the 2DEG were determined from the cyclotron resonance measurements, and satisfied qualitatively the nonparabolicily effects in the quantum wells. The electronic subband structures were calculated by using a self-consistent method.