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Measurements of insulator band parameters using combination of single-electron and two-electron spectroscopy

机译:结合单电子和二电子光谱法测量绝缘带参数

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We describe the application of low energy time-of-flight coincidence (e,2e) spectroscopy for measurements of the energy band parameters of a dielectric. The (e,2e) spectrometer can operate also in a single-electron mode by switching off coincidence conditions, and can be used for recording electron energy loss spectra (EELS). Thus, the combination of (e,2e) and EELS allows the measurement of energy gap E valence bandwidth DeltaE(val), electron affinity chi and excitonic levels position E-ex of a dielectric. The energy band parameters of LiF film deposited on Si(001) surface are measured: E-g = (13.0 +/- 0.4) eV, DeltaE(val) = (6.0 +/- 0.5) eV, E-ex = (10.0 +/- 0.4) eV, chi = (1.0 +/- 0.4) eV. (C) 2003 Elsevier Ltd. All rights reserved. [References: 13]
机译:我们描述了低能飞行时间重合(e,2e)光谱在电介质能带参数测量中的应用。 (e,2e)光谱仪还可以通过关闭重合条件而以单电子模式运行,并可用于记录电子能量损失谱(EELS)。因此,(e,2e)和EELS的组合允许测量电介质的能隙E价带宽DeltaE(val),电子亲和力chi和激子能级位置E-ex。测量沉积在Si(001)表面上的LiF薄膜的能带参数:Eg =(13.0 +/- 0.4)eV,DeltaE(val)=(6.0 +/- 0.5)eV,E-ex =(10.0 + / -0.4)eV,chi =(1.0 +/- 0.4)eV。 (C)2003 Elsevier Ltd.保留所有权利。 [参考:13]

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