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Principal energy band gaps of the quaternary alloy AlxGa1-xSbyAs1-y

机译:四元合金AlxGa1-xSbyAs1-y的主能带隙

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The correlated function expansion (CFE) interpolation procedure was presented to efficiently estimate principal energy band gaps and lattice constants of the quaternary alloy AlxGa1-xSbyAs1-y over the entire composition variable space. The lattice matching conditions between x and y for the alloy AlxGa1-xSbyAs1-y substrated to InAs and GaSb were obtained by optimizing the alloy lattice constant to that of the substrates. The corresponding principal band gaps (E(Gamma), E(L), and E(X)) were also calculated along the lattice matching condition on each substrate (InAs and GaSb). (c) 2004 Elsevier Ltd. All rights reserved.
机译:提出了相关函数展开(CFE)内插程序,以有效地估计整个组成变量空间上四元合金AlxGa1-xSbyAs1-y的主能带隙和晶格常数。通过优化合金晶格常数使其与基体的晶格常数相匹配,可以得到沉积在InAs和GaSb上的AlxGa1-xSbyAs1-y合金的x和y晶格匹配条件。还沿着每个衬底(InAs和GaSb)上的晶格匹配条件计算了相应的主带隙(E(γ),E(L)和E(X))。 (c)2004 Elsevier Ltd.保留所有权利。

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