首页> 外文期刊>Solid State Communications >Density functional calculations of dangling bonds for CN and SiN films
【24h】

Density functional calculations of dangling bonds for CN and SiN films

机译:CN和SiN薄膜悬空键的密度泛函计算

获取原文
获取原文并翻译 | 示例
           

摘要

Hyperfine interaction constants (HFICs) of dangling bonds for CN and SiN films were calculated by density-functional theory. The averaged N-14 isotropic HFICs for C dangling bonds are almost equal to those for Si dangling bonds. The anisotropic N-14 HFICs calculated for C dangling bonds are larger than those for Si dangling bonds by a factor 2. The calculated results were compared with experimental results obtained by electron spin resonance and electron nuclear double resonance. It was indicated that the carbon dangling bonds are located such that they avoid N atoms in CN films. (c) 2004 Elsevier Ltd. All rights reserved.
机译:用密度泛函理论计算了CN和SiN膜的悬空键的超精细相互作用常数(HFIC)。 C悬挂键的平均N-14各向同性HFIC几乎等于Si悬挂键的各向同性HFIC。计算出的C悬挂键的各向异性N-14 HFIC比Si悬挂键的各向异性N-14 HFIC大2倍。将计算结果与通过电子自旋共振和电子核双共振获得的实验结果进行了比较。已经表明碳悬空键的位置使得它们避免CN膜中的N原子。 (c)2004 Elsevier Ltd.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号