High-quality two-dimensional electron gas at large scale GaN/AlGaN wafer interface prepared by mass production MOCVD systems

摘要

Basic electronic properties of two-dimensional electron gas (2DEG) formed at GaN/AlGaN hetero-interface in large-scale (100 mm) wafer made by metal organic chemical vapour deposition (MOCVD) have been reported and discussed. From conventional Hall measurements, highest electron mobility was found to be mu(c) similar to 1680 and 9000 cm(2)/V s at room temperature and at similar to 5 K, respectively, for sheet electron density of n(s) similar to 8 x 10(12) cm(-2). In magneto-resistance (MR) measurements carried out at 1.5 K in Hall bar sample defined by photolithography and ion implantation, very clear Schubnikov de-Haas oscillations and integer quantum Hall effect were observed in diagonal (R-xx) and off-diagonal (R-xy) resistances, respectively. In addition, a Good insulating nature of GaN layer is confirmed by capacitance-voltage (C-V) measurement. These results suggest the high-qualitiness of our 100 mm GaN/AlGaN high electron mobility transistor (HEMT) wafers comparable to those so far reported. (c) 2005 Published by Elsevier Ltd.