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Large-scale array of highly oriented silicon-rich microanowires induced by gas flow steering

机译:气流导向引起的高取向富硅微纳米线的大规模排列

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摘要

Si-rich nanowires have been synthesized by decomposition of silicon monoxide (SiO) at a temperature of 1080degreesC, with argon (Ar) as the carrier gas. The morphology was observed to be highly oriented on a rnacro-scale by scanning electron microscopy (SEM). The formation mechanisms of the ordered morphology were discussed by means of energy dispersion X-ray spectroscopy (EDS), Raman scattering and high-resolution transmission electron microscopy (HRTEM) and we attributed this to the steering of the gas flow. (C) 2004 Elsevier Ltd. All rights reserved.
机译:富硅纳米线是通过在1080摄氏度的温度下以氩气(Ar)为载气分解一氧化硅(SiO)来合成的。通过扫描电子显微镜(SEM)观察到形态在rnacro规模上高度取向。通过能量色散X射线光谱(EDS),拉曼散射和高分辨率透射电子显微镜(HRTEM)讨论了有序形态的形成机理,我们将其归因于气流的控制。 (C)2004 Elsevier Ltd.保留所有权利。

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