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Enhancement of field emission of SnO2 nanowires film by exposure of hydrogen gas

机译:通过暴露氢气增强SnO2纳米线薄膜的场致发射

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The effect of hydrogen (H-2) gas exposure on the field emission properties of tin oxide (SnO2) nanowires films synthesized by the carbon thermal reduction vapor transport method was investigated. The exposure of H2 gas results in the reduction of the turn-on voltage for driving a current of 10 nA from 7.6 V/mu m to 5.5 V/mu m and the increase of the field current based on 10 V/mu m from 0.47 mu A to 2.1 mu A. The Fowler-Nordheim plot obtained from the current-voltage data supports that the field emission enhancement of SNW film is attributed to the reduction of the work function by the H-2 exposure. (c) 2006 Elsevier Ltd. All rights reserved.
机译:研究了氢气(H-2)暴露对通过碳热还原气相传输法合成的氧化锡(SnO2)纳米线薄膜的场发射特性的影响。氢气的暴露导致驱动10 nA电流的导通电压从7.6 V /μm降低到5.5 V /μm,基于10 V /μm的励磁电流从0.47增加μA到2.1μA。从电流-电压数据获得的Fowler-Nordheim曲线支持SNW膜的场发射增强归因于H-2曝光导致功函数的降低。 (c)2006 Elsevier Ltd.保留所有权利。

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