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The Hall-Lorenz number in the La1.855Sr0.145CuO4 single crystal

机译:La1.855Sr0.145CuO4单晶中的霍尔洛伦兹数

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The temperature dependence of the Hall-Lorenz number (L-xy) for the optimally doped La1.855Sr0.145CuO4 (LSCO) has been obtained from the experimentally determined transverse and longitudinal transport coefficients. A comparison between L-xy (T) dependence found for LSCO and L-xy (T) reported previously for copper indicates that the Hall-Lorenz number in LSCO follows standard metallic behavior from room temperature down to T similar to 150 K. Below this temperature the L-xy coefficient deviates from regular metallic dependence in a way characteristic of an electronic system with lowered density of electronic states at the Fermi level. We present results of calculations provided in terms of the Boltzmann equation for a two-dimensional model of the electronic structure with a d-symmetrical pseudogap. A temperature T-max, where a maximum in the L-xy (T) dependence appears, turns out to be dependent on the width of the supposed pseudogap (E-g(max)). The best agreement between the model and the experimental data was obtained for E-g(max) similar to 25 meV, which corresponds well with values reported previously by other groups. (c) 2006 Elsevier Ltd. All rights reserved.
机译:最佳掺杂的La1.855Sr0.145CuO4(LSCO)的霍尔洛伦兹数(L-xy)的温度依赖性已从实验确定的横向和纵向传输系数中获得。对LSCO的L-xy(T)依赖性和先前对铜的L-xy(T)依赖性之间的比较表明,LSCO中的霍尔洛伦兹数遵循从室温到T的标准金属行为,类似于150K。在一定温度下,L-xy系数偏离了常规的金属依赖性,这是电子系统在费米能级下电子态密度降低的特征。我们提出了根据玻尔兹曼方程提供的具有d对称伪间隙的电子结构的二维模型的计算结果。温度T-max取决于L-xy(T)的最大值,该温度取决于假定的伪间隙的宽度(E-g(max))。对于E-g(max),获得类似于25 meV的模型和实验数据之间的最佳一致性,这与其他小组先前报告的值非常吻合。 (c)2006 Elsevier Ltd.保留所有权利。

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