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Electronic band gap of SrSe at high pressure

机译:高压下SrSe的电子带隙

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The electronic band gap of SrSe, in the CsCl-stuctured phase, was measured to 42 GPa via optical absorption studies. The indirect electronic band gap was found to close monotonically with pressure for the range of pressures studied. The change in band gap with respect to pressure, dE(gap)/dP, was determined to be -6.1(5) x 10(-3) eV/GPa. By extrapolation of our line fit, we estimate band gap closure to occur at 180(20) GPa. (c) 2006 Elsevier Ltd. All fights reserved.
机译:通过光吸收研究,在CsCl结构相中SrSe的电子带隙为42 GPa。在所研究的压力范围内,发现间接电子带隙随压力单调闭合。带隙相对于压力的变化dE(gap)/ dP被确定为-6.1(5)x 10(-3)eV / GPa。通过线拟合的外推,我们估计带隙闭合发生在180(20)GPa。 (c)2006年Elsevier Ltd.版权所有。

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