Hall mobility of amorphous Ge2Sb2Te5

摘要

The electrical conductivity, Seebeck coefficient, and Hall coefficient of three-micron-thick films of amorphous Ge2Sb2Te5 have been measured as functions of temperature from room temperature down to as low as 200 K. The electrical conductivity manifests an Arrhenius behavior. The Seebeck coefficient is p-type with behavior indicative of multi-band transport. The Hall mobility is n-type and low (near 0.07 cm(2)/V s at room temperature). (c) 2006 Elsevier Ltd. All rights reserved.