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The origin of additional modes in Raman spectra of N+-implanted ZnO

机译:N +注入的ZnO拉曼光谱中其他模式的起源

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Raman measurements were performed on ZnO single crystals before and after implantation with N+, O+, Si+, and Ga+ ions. It is found that the broad Raman band at 576 cm(-1) appears in all spectra of implanted ZnO, independent of the ion species, and thus it is attributed to disorderactivated Raman scattering. Two extra peaks at 275 and 510 cm(-1) are observed only in Raman spectrum of N+-implanted ZnO. The dependence of intensity on doses indicates that the origin of these two modes is different from that of 576 cm(-1) peak. We assign the additional modes to N+-related local vibrational modes. (c) 2006 Elsevier Ltd. All rights reserved.
机译:在注入N +,O +,Si +和Ga +离子之前和之后,对ZnO单晶进行拉曼测量。发现在576 cm(-1)处的宽拉曼谱带出现在所植入的ZnO的所有光谱中,与离子种类无关,因此归因于无序激活的拉曼散射。仅在N +注入的ZnO的拉曼光谱中观察到275和510 cm(-1)处的两个额外峰。强度对剂量的依赖性表明这两种模式的起源与576 cm(-1)峰的起源不同。我们将其他模式分配给N +相关的局部振动模式。 (c)2006 Elsevier Ltd.保留所有权利。

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