Contactless electroreflectance of GaN_yAs_(1-y)/GaAs multi quantum wells: The conduction band offset and electron effective mass issues

摘要

Interband transitions in GaN_yAs_(1-y)/GaAs multi quantum well (MQW) samples with y = 0.012 and 0.023 have been studied by contactless electroreflectance spectroscopy (CER). Optical transitions related to absorption in the GaAs barriers and in the GaN_yAs_(1-y)/GaAs QWs have been observed and analyzed. The GaAs related transition exhibits clear Franz-Keldysh oscillations with the period corresponding to the built-in electric field of 14 and 17 kV/cm for samples with y = 0.012 and 0.023, respectively. The portion of the CER spectrum related to absorption in the GaN_yAs_(1-y)/GaAs QW exhibits two clear resonances which are attributed to optical transitions between the ground and excited states confined in the QWs. The resonance attributed to the ground state transition is associated with absorption between the first light- and heavy-hole subbands and the first electron subband (11L and 11H) while the resonance attributed to the excited state transition is associated with absorption between the second heavy-hole subband and the second electron subband (22H). The energies of the 11H and 22H transitions have been matched with those obtained from theoretical calculations performed within the effective mass approximation. Thus, the GaN_yAs_(1-y)/GaAs QWs are type-Ⅰ structures with a conduction band offset, Q_C, between 70 and 80%. Moreover, the incorporation of N atoms into GaAs is found to cause a significant increase in the electron effective mass. The determined values of electron effective mass for GaN_yAS_(1-y)/GaAs QW with y = 0.012 and 0.023 are O.105m_0 and 0.115m_0, respectively.