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Defining under and over-doping as bond order phenomena in the pair plaid model

机译:在成对格子模型中将不足和过量掺杂定义为键序现象

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Within the rules of a pair plaid model charge-lattice lock-in patterns are identified, which are responsible for the trends to characteristic hole values for a variety of features in the doping curves [onsets, kinks or optima] of cuprates and related materials. Examples are the prevalence of optimal hole values of 0.16, 0.22 or 0.25. Selection of one of these values depends on the degree of isolation of the plane. Periods of pair plaid represent a central aspect for an algorithm of T, or doping curve predictions when combined with the plane isolation model. Aspects of the theoretical concept of pair plaids have been made visible in recent STM graphs indicating electronic crystal behavior for the related pseudo-gap region. Pair plaids are in competition with stripes of non-superconducting singles and can be transformed into them. This competition is further elucidated with emphasis on the regions, where both orders can coexist. This further defines over and under-doping. (c) 2005 Published by Elsevier Ltd.
机译:在一对格子模型的规则范围内,确定了电荷晶格锁定模式,该模式导致了铜酸盐和相关材料的掺杂曲线[基团,扭结或最佳值]中各种特征的特征孔值趋势。例如,最佳孔值为0.16、0.22或0.25。这些值之一的选择取决于平面的隔离度。成对的格子周期代表T算法或与平面隔离模型结合时的掺杂曲线预测的中心方面。在最近的STM曲线图中,可以看到成对格子的理论概念的各个方面,这些图形指示了相关伪间隙区域的电子晶体行为。配对格子与非超导单身的条纹竞争,可以转换成它们。进一步阐明了这种竞争,重点是两个命令可以共存的区域。这进一步定义了过掺杂和欠掺杂。 (c)2005年由Elsevier Ltd.发布。

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