Model of magnetic anisotropy in disordered semimagnetic semiconductors

摘要

We propose a model explaining the origin of cubic magnetic anisotropy in disordered semiconductor. We show that the magnetic anisotropy changes with the position of the Fermi energy in the valence band and the level of disorder in the crystal. The method is applied to Pb1-x-ySnyMnxTe and Sn1-xMnxTe ferromagnetic semiconductor crystals. (c) 2005 Elsevier Ltd. All rights reserved.