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Centers of photosensitivity in ZnO

机译:ZnO中的光敏中心

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To reveal recombination centers responsible for ZnO UV photosensitivity, combined investigations of photoconductivity (PC) and photoluminescence (PL) spectra were performed in nominally undoped ZnO single crystals. In PL spectra, green (500 nm), orange (620 nm) and red (720 nm) bands related to deep levels were present, the greater the relative intensity of orange band the higher the photosensitivity. After removal of exciting light, PL afterglow as well as PC "tail" took place at 77 K. It was found that decay time of PC "tail" coincided with that of orange band afterglow and was essentially longer than the afterglow decay times of green and red bands. The conclusion was made that recombination centers responsible for the orange band were the centers of photosensitivity. In addition, a strong influence of electron traps on steady-state PC was shown.
机译:为了揭示负责ZnO UV光敏性的复合中心,在标称未掺杂的ZnO单晶中进行了光电导(PC)和光致发光(PL)光谱的组合研究。在PL光谱中,存在与深水平相关的绿色(500 nm),橙色(620 nm)和红色(720 nm)谱带,橙色谱带的相对强度越大,光敏性越高。去除激发光后,PL余辉以及PC“尾巴”在77 K处发生。发现PC“尾巴”的衰减时间与橙色带余辉的衰减时间相符,并且比绿色“余辉”的余辉衰减时间更长。和红色乐队。结论是,负责橙色带的重组中心是光敏中心。另外,显示了电子陷阱对稳态PC的强烈影响。

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