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Effects of Cr doping in electron-doped manganites La_(0.9)Te_(0.1)MnO_3

机译:Cr掺杂对La_(0.9)Te_(0.1)MnO_3电子掺杂锰的影响

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摘要

The effects of Cr doping on Mn sites in the electron-doped manganites La_(0.9)Te_(0.1)MnO_3 have been studied by preparing the series La_(0.9)Te_(0.1)Mn_(1-x)Cr_xO_3 (0.05 ≤ x ≤ 0.20). Upon Cr doping, both the Curie temperature T_C and magnetization M are suppressed. The resistivity measurements indicate that there exists a weak metal-insulator (M-I) transition for the sample with x = 0.05, with an increase in the doping level, the M-I transition disappears and the resistivity increases. Thermopower S(T) exhibits a maximum near T_C for all samples. By fitting the S(T) and ρ(T) curves, it is found that the temperature dependences of both S(T) and ρ(T) in the high temperature paramagnetic (PM) region follow the small polaron conduction (SPC) mechanism for all samples. The fitting parameters obtained imply changes of both the average-hopping distance of the polarons and the polaron concentration with Cr doping in our studied samples. In the case of the thermal conductivity κ(T), the variation of κ(T) is analyzed based on the combined effects due to the suppression of the local Mn~(3+)O_6 Jahn-Teller (JT) lattice distortion because of the substitution of Cr~(3+) for Mn~(3+) ions, which results in the increase in κ, and the introduction of the disorder due to Cr-doping, which contributes to the decrease in κ.
机译:通过制备La_(0.9)Te_(0.1)Mn_(1-x)Cr_xO_3系列(0.05≤x≤,研究了Cr掺杂对电子掺杂锰La_(0.9)Te_(0.1)MnO_3中Mn位置的影响。 0.20)。在Cr掺杂时,居里温度T_C和磁化强度M均被抑制。电阻率测量表明,对于x = 0.05的样品,存在弱的金属-绝缘体(M-I)过渡,随着掺杂水平的增加,M-I过渡消失且电阻率增加。对于所有样品,热功率S(T)在T_C附近都显示出最大值。通过拟合S(T)和ρ(T)曲线,发现高温顺磁(PM)区域中S(T)和ρ(T)的温度依赖性遵循小极化子传导(SPC)机理对于所有样品。获得的拟合参数表明,在我们研究的样品中,极化子的平均跳变距离和极化子浓度随Cr掺杂而变化。在热导率κ(T)的情况下,基于抑制Mn〜(3+)O_6贾恩-泰勒(JT)晶格畸变引起的综合效应,分析了κ(T)的变化用Cr〜(3+)替代Mn〜(3+)离子,导致κ增大,并且引入了由于Cr掺杂引起的无序,从而导致κ减小。

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