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首页> 外文期刊>IEEE Journal of Solid-State Circuits >An 8-b, 40 msamples/s switched-current-mode track-and-hold circuit on a BiCMOS sea-of-gates array
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An 8-b, 40 msamples/s switched-current-mode track-and-hold circuit on a BiCMOS sea-of-gates array

机译:BiCMOS门阵列上的8位b,40 msamples / s开关电流模式采样保持电路

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A fully differential track-and-hold circuit based on the switched-current processing has been integrated on a fully complementary 1.2 /spl mu/m-6 GHz BiCMOS sea-of-gates array. It is based on a BiCMOS switched-current memory cell which uses MOS transistors to store the analog information and bipolar transistors to implement the switch. This improves the speed achievable and the distortion compared to a CMOS-only switched-current memory cell. A differential configuration is also presented which made it possible to improve performances such as the hold mode feedthrough (>-67 dB @ 10 MHz) or the pedestal error. The acquisition time for a full scale step is 22 ns, in order to reach the final value within 0.1%. It achieves 8-b precision at a sample-rate of 40 MHz under Nyquist condition, a full scale track-mode bandwidth of 150 MHz and a consumption of 80 mW for a surface of 0.44 mm/sup 2/.
机译:基于开关电流处理的全差分跟踪保持电路已集成在完全互补的1.2 / spl mu / m-6 GHz BiCMOS门阵列中。它基于BiCMOS开关电流存储单元,该存储单元使用MOS晶体管存储模拟信息,并使用双极晶体管实现开关。与仅CMOS开关电流存储单元相比,这提高了可达到的速度和失真。还提出了一种差分配置,可以改善性能,例如保持模式馈通(10 MHz时> -67 dB)或基座误差。满量程步进的采集时间为22 ns,以便在0.1%内达到最终值。在奈奎斯特条件下,它在40 MHz的采样率下可达到8-b的精度,在150 MHz的满量程跟踪模式带宽下,对于0.44 mm / sup 2 /的表面功耗为80 mW。

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