...
首页> 外文期刊>IEEE Journal of Solid-State Circuits >Noncomplimentary rewriting and serial-data coding scheme for shared-sense-amplifier open-bit-line DRAM
【24h】

Noncomplimentary rewriting and serial-data coding scheme for shared-sense-amplifier open-bit-line DRAM

机译:共享检测放大器开放位线DRAM的非免费重写和串行数据编码方案

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

A noncomplimentary rewriting scheme is proposed for open-bit-line DRAM's adopting a shared subsense amplifier. The scheme can theoretically cancel inter-bit-line coupling noise down to zero. In order to suppress the peak in unselected word line noise, a serial-data coding scheme was also developed, This scheme can reduce unselected word-line noise by at least 50%.
机译:对于采用共享子放大器的开放位线DRAM,提出了一种非免费的重写方案。该方案在理论上可以将位线间的耦合噪声降低到零。为了抑制未选择字线噪声的峰值,还开发了串行数据编码方案,该方案可以将未选择字线噪声降低至少50%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号