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首页> 外文期刊>IEEE Journal of Solid-State Circuits >Noncomplimentary rewriting and serial-data coding scheme forshared-sense-amplifier open-bit-line DRAM
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Noncomplimentary rewriting and serial-data coding scheme forshared-sense-amplifier open-bit-line DRAM

机译:共享检测放大器开放位线DRAM的非免费重写和串行数据编码方案

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摘要

A noncomplimentary rewriting scheme is proposed for open-bit-linenDRAM's adopting a shared subsense amplifier. The scheme canntheoretically cancel inter-bit-line coupling noise down to zero. Innorder to suppress the peak in unselected word line noise, a serial-datancoding scheme was also developed, This scheme can reduce unselectednword-line noise by at least 50%
机译:提出了一种非免费的重写方案,用于采用共享子检波放大器的开放位线nDRAM。该方案可以从理论上将位线间耦合噪声消除为零。为了抑制非选择字线噪声的峰值,还开发了串行数据编码方案,该方案可以将非选择字线噪声降低至少50%

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