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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 2000-MOPS embedded RISC processor with a Rambus DRAM controller
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A 2000-MOPS embedded RISC processor with a Rambus DRAM controller

机译:具有Rambus DRAM控制器的2000-MOPS嵌入式RISC处理器

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We have developed a 0.25-/spl mu/m, 200-MHz embedded RISC processor for multimedia applications. This processor has a dual-issue superscalar datapath that consists of a 32-bit integer unit and a 64-bit single-instruction multiple-data (SIMD) function unit that together have a total of five multiply-adders. An on-chip concurrent Rambus DRAM (C-RDRAM) controller uses interleaved transactions to increase the memory bandwidth of the Rambus channel to 533 Mb/s. The controller also reduces latency by using the transaction interleaving and instruction prefetching. A 64-bit, 200-MHz internal bus transfers data among the CPU core, the C-RDRAM, and the peripherals. These high-data-rate channels improve CPU performance because they eliminate a bottleneck in the data supply. The datapath part of this chip was designed using a functional macrocell library that included placement information for leaf cells and resulted in the SIMD function unit of this chip's having 68000 transistors per square millimeter.
机译:我们已经开发了用于多媒体应用的0.25- / spl mu / m,200-MHz嵌入式RISC处理器。该处理器具有双问题超标量数据路径,该路径由32位整数单元和64位单指令多数据(SIMD)功能单元组成,它们总共具有五个乘法加法器。片上并发Rambus DRAM(C-RDRAM)控制器使用交错事务将Rambus通道的内存带宽增加到533 Mb / s。控制器还通过使用事务交织和指令预取来减少等待时间。 64位200MHz内部总线在CPU内核,C-RDRAM和外围设备之间传输数据。这些高数据速率通道提高了CPU性能,因为它们消除了数据供应方面的瓶颈。该芯片的数据路径部分是使用功能宏单元库设计的,该库包含叶单元的放置信息,因此该芯片的SIMD功能单元每平方毫米具有68000个晶体管。

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