Generating all two-MOS-transistor amplifiers leads to new wide-bandLNAs

摘要

This paper presents a methodology that systematically generatesnall 2-MOS-transistor wide-band amplifiers, assuming that MOSFET isnexploited as a voltage-controlled current source. This leads to newncircuits. Their gain and noise factor have been compared to well-knownnwide-band amplifiers. One of the new circuits appears to have anrelatively low noise factor, which is also gain independent. Based onnthis new circuit, a 50-900 MHz variable-gain wide-band LNA has beenndesigned in 0.35-Μm CMOS. Measurements show a noise figure betweenn4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2ndB lower than the noise figure of the wide-band common-gate LNA for thensame input matching, power consumption, and voltage gain. IIP2 and IIP3nare better than 23.5 and 14.5 dBm, respectively, while the LNA drainsnonly 1.5 mA at 3.3 V