A SiGe BiCMOS burst-mode 155-Mb/s receiver for PON

摘要

In this paper, we present an integrated 155-Mb/s burst-modenreceiver (BMR) for passive optical network (PON) applications. The chipnhas been designed to receive optical signals over a wide dynamic rangen(-30 to -8 dBm) and temperature range (-40°C to +85°C). The chipnwas implemented using a 0.8-Μm 35-GHz SiGe BiCMOS technology andnoccupies an area of 4.3×4.9 mm2 with a powernconsumption of 500 mW from a supply voltage of 5 V (3.3 V for thendigital PECL output). In the receiver analog front end, we used anlow-noise wide-band transimpedance amplifier followed by a nonlinearngain stage to cover a wide signal range without changing thentransimpedance gain. The circuit dynamically adjusts the receivernthreshold voltage through a feedback loop, thus optimizing thenpulsewidth distortion and canceling the optical as well as thenelectrical offset voltages