首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 1.5-V 75-dB dynamic range third-order G/sub m/-C filter integrated in a 0.18-/spl mu/m standard digital CMOS process
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A 1.5-V 75-dB dynamic range third-order G/sub m/-C filter integrated in a 0.18-/spl mu/m standard digital CMOS process

机译:1.5V 75dB动态范围三阶G / sub m / -C滤波器,集成在0.18- / splμ/ m标准数字CMOS工艺中

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摘要

A design methodology of a CMOS linear transconductor for low-voltage and low-power filters is proposed in this paper. It is applied to the analog baseband filter used in a transceiver designed for wireless sensor networks. The transconductor linearization scheme is based on regulating the drain voltage of triode-biased input transistors through an active-cascode loop. A third-order Butterworth low-pass filter implemented with this transconductor is integrated in a 0.18-/spl mu/m standard digital CMOS process. The filter can operate down to 1.2-V supply voltage with a cutoff frequency ranging from 15 to 85 kHz. The 1% total harmonic distortion dynamic range measured at 1.5 V for 20-kHz input signal and 50-kHz cutoff frequency is 75 dB, while dissipating 240 /spl mu/W.
机译:提出了一种用于低压低功耗滤波器的CMOS线性跨导体的设计方法。它应用于为无线传感器网络设计的收发器中使用的模拟基带滤波器。跨导体线性化方案基于通过有源共源共栅环路调节三极管偏置的输入晶体管的漏极电压。用该跨导器实现的三阶巴特沃思低通滤波器集成在0.18- / spl mu / m标准数字CMOS工艺中。该滤波器可在低至1.2V电源电压下工作,其截止频率范围为15至85 kHz。在1.5 V下针对20 kHz输入信号和50 kHz截止频率测得的总谐波失真动态范围为1%,为75 dB,而功耗为240 / spl mu / W。

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