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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Low-Voltage Folded-Switching Mixer in 0.18-μm CMOS
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A Low-Voltage Folded-Switching Mixer in 0.18-μm CMOS

机译:采用0.18μmCMOS的低压折叠开关混频器

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摘要

Scaling of CMOS technologies has a great impact on analog design. The most severe consequence is the reduction of the voltage supply. In this paper, a low voltage, low power, ac-coupled folded-switching mixer with current-reuse is presented. The main advantages of the introduced mixer topology are: high voltage gain, moderate noise figure, moderate linearity, and operation at low supply voltages. Insight into the mixer operation is given by analyzing voltage gain, noise figure (NF), linearity (IIP3), and dc stability. The mixer is designed and implemented in 0.18-μm CMOS technology with metal-insulator-metal (MIM) capacitors as an option. The active chip area is 160μm × 200μm. At 2.4 GHz a single side band (SSB) noise figure of 13.9 dB, a voltage gain of 11.9 dB and an IIP3 of -3 dBm are measured at a supply voltage of 1 V and with a power consumption of only 3.2 mW. At a supply voltage of 1.8 V, an SSB noise figure of 12.9 dB, a voltage gain of 16 dB and an IIP3 of 1 dBm are measured at a power consumption of 8.1 mW.
机译:CMOS技术的扩展对模拟设计有很大影响。最严重的后果是减少了电源。本文提出了一种具有重用电流的低电压,低功率,交流耦合折叠开关混频器。引入的混频器拓扑的主要优点是:高电压增益,适度的噪声系数,适度的线性度以及在低电源电压下的运行。通过分析电压增益,噪声系数(NF),线性度(IIP3)和直流稳定性,可以深入了解混频器的工作情况。该混频器采用0.18μmCMOS技术设计和实现,并可选配金属绝缘体金属(MIM)电容器。有源芯片面积为160μm×200μm。在2.4 GHz的单边带(SSB)噪声指数为13.9 dB,电压增益为11.9 dB,IIP3为-3 dBm的情况下,电源电压为1 V且功耗仅为3.2 mW。在1.8 V的电源电压下,在8.1 mW的功耗下测得的SSB噪声系数为12.9 dB,电压增益为16 dB,IIP3为1 dBm。

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