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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 1.5 V 3.1 GHz–8 GHz CMOS Synthesizer for 9-Band MB-OFDM UWB Transceivers
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A 1.5 V 3.1 GHz–8 GHz CMOS Synthesizer for 9-Band MB-OFDM UWB Transceivers

机译:用于9频段MB-OFDM UWB收发器的1.5 V 3.1 GHz–8 GHz CMOS合成器

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This paper presents the design of a CMOS synthesizer for dual-conversion zero-IF2 Multi-Band OFDM (MB-OFDM) transceivers covering the first 9 frequency bands from 3.1GHz to 8.0GHz, each with a bandwidth of 528 MHz. A wideband single-sideband mixer with wideband inductive network loading is proposed. Moreover, a modified transformer-coupled quadrature VCO and interconnection-loading-insensitive layout technique are employed. Fabricated in TSMC 0.18-mum CMOS process and operated at 1.5V, the synthesizer measures phase noise of -127.4dBc/Hz at 10MHz offset, integrated phase noise of 4.43deg, sideband suppression of better than -22 dBc, and a switching time of less than 1ns while consuming 59 mA
机译:本文提出了一种用于双转换零IF2多频带OFDM(MB-OFDM)收发器的CMOS合成器的设计,该收发器覆盖了从3.1GHz到8.0GHz的前9个频段,每个频段的带宽均为528 MHz。提出了一种具有宽带感应网络负载的宽带单边带混频器。此外,采用了一种改进的变压器耦合正交VCO和互连负载不敏感的布局技术。该合成器采用台积电(TSMC)0.18微米CMOS工艺制造,并在1.5V电压下工作,在10MHz偏移下测量的相位噪声为-127.4dBc / Hz,积分的相位噪声为4.43deg,边带抑制优于-22 dBc,开关时间为消耗59 mA电流时小于1ns

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