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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Large Swing, 40-Gb/s SiGe BiCMOS Driver With Adjustable Pre-Emphasis for Data Transmission Over 75 $Omega$ Coaxial Cable
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A Large Swing, 40-Gb/s SiGe BiCMOS Driver With Adjustable Pre-Emphasis for Data Transmission Over 75 $Omega$ Coaxial Cable

机译:具有可调节预加重功能的大型摆动,40 Gb / s SiGe BiCMOS驱动器,用于通过75条$ Omega $同轴电缆进行数据传输

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摘要

A fully differential 40-Gb/s cable driver with adjustable pre-emphasis is presented. The circuit is fabricated in a production 0.18 mum SiGe BiCMOS technology. A distributed limiting architecture is used for the driver employing high-speed HBTs in the lower voltage predriver, and a high-breakdown MOS-HV-HBT cascode, consisting of a 0.18 mum n-channel MOSFET and a high-voltage HBT (HV-HBT), for the high voltage output stages. The circuit delivers up to 3.6 V peak-to-peak per side into a 75 Omega load with variable pre-emphasis ranging from 0 to 400%. S-parameter measurements show 42 dB differential small-signal gain, a 3-dB bandwidth of 22 GHz, gain peaking control up to 25 dB at 20 GHz and input and output reflection coefficients better than -10 dB up to 40 GHz. Additional features of the driver include output amplitude control (from 1 Vpp to 3.6 Vpp per side), pulse-width control (35% to 65%) and an adjustable input dc level (1.1 V to 1.8 V) allowing the circuit to interface with a SiGe BiCMOS or MOS-CML SERDES. The transmitter is able to generate an eye opening at 38 Gb/s after 10 m of Belden 1694 A coaxial cable which introduces 22 dB of loss at 19 GHz. Measurement results also demonstrate that the transmitter IC operates as a standalone equalizer for 10-Gb/s data transmission over 40 m of Belden cable without the need for receiver equalization.
机译:提出了具有可调节预加重的全差分40 Gb / s电缆驱动器。该电路采用0.18微米SiGe BiCMOS生产技术制造。分布式限制架构用于在较低电压预驱动器中采用高速HBT的驱动器,以及由0.18微米n沟道MOSFET和高压HBT(HV-HV)组成的高击穿MOS-HV-HBT共源共栅HBT),用于高压输出级。该电路每侧可向75 Omega负载提供高达3.6 V的峰峰值,其预加重范围为0至400%。 S参数测量显示42 dB的差分小信号增益,22 GHz的3 dB带宽,在20 GHz时的增益峰值控制高达25 dB,在40 GHz时的输入和输出反射系数优于-10 dB。该驱动器的其他功能包括输出幅度控制(每侧1 Vpp至3.6 Vpp),脉冲宽度控制(35%至65%)和可调的输入dc电平(1.1 V至1.8 V),使电路可以与SiGe BiCMOS或MOS-CML SERDES。在使用Belden 1694 A同轴电缆10 m后,发射器能够以38 Gb / s的速度产生眼图张开,在19 GHz时会引入22 dB的损耗。测量结果还表明,发送器IC可以作为独立的均衡器运行,可在40 m的Belden电缆上进行10 Gb / s数据传输,而无需接收器均衡。

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