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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Single-Chip UHF RFID Reader in 0.18 $mu{hbox {m}}$ CMOS Process
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A Single-Chip UHF RFID Reader in 0.18 $mu{hbox {m}}$ CMOS Process

机译:采用0.18 $ mu {hbox {m}} $ CMOS工艺的单芯片UHF RFID读取器

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摘要

A single-chip UHF RFID reader that integrates all building blocks—including an RF transceiver, IQ data converters, and a digital baseband—is implemented in a 0.18 $mu{hbox {m}}$ CMOS process. A high-linearity RX front-end and a low-phase-noise synthesizer are proposed to handle the large self-interferer, which is a key challenge in the reader RX design. Highly reconfigurable mixed-signal baseband architecture for channel-selection filtering is proposed to achieve power optimization for multi-protocol operation with different system dynamic ranges and data rates. The reader dissipates a maximum power of 276.4 mW when transmitting maximum output power of 10.4 dBm and receiving the tag''''s response of $-$70 dBm in the presence of $-$5 dBm self-interferer while occupying 18.3 ${hbox {mm}}^{2}$.
机译:集成了所有模块(包括RF收发器,IQ数据转换器和数字基带)的单芯片UHF RFID读取器以0.18美元的CMOS工艺实现。提出了一种高线性度RX前端和一个低相位噪声合成器来处理大型自干扰器,这是阅读器RX设计中的关键挑战。提出了用于信道选择滤波的高度可重构混合信号基带架构,以实现具有不同系统动态范围和数据速率的多协议操作的功率优化。在存在$-$ 5 dBm自干扰器的情况下,阅读器在传输10.4 dBm的最大输出功率并接收标签响应$-$ 70 dBm时耗散最大功率276.4 mW,但占用了18.3 $ {hbox {毫米}} ^ {2} $。

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