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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 0.46-THz 25-Element Scalable and Wideband Radiator Array With Optimized Lens Integration in 65-nm CMOS
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A 0.46-THz 25-Element Scalable and Wideband Radiator Array With Optimized Lens Integration in 65-nm CMOS

机译:0.46至THz 25元元素可扩展和宽带散热器阵列,具有65-NM CMOS的优化镜头集成

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In this article, we present a 438-479-GHz fully integrated 25-element radiator array source based on a scalable structure of coupled standing wave oscillator cells without extra loss and parasitics from coupling networks. The bandwidth is extended using a varactor-less frequency tuning method, and EIRP is improved by increasing the size of the array using the proposed scalable coupling method and maximizing the radiation directivity using a silicon lens in an optimized radiation setup. An analysis of the radiation directivity of a chip-lens setup is presented as well as the employed approach for enhancing EIRP by maximizing the directivity. The circuit is implemented in a 65-nm CMOS process and is measured to have 40.7 GHz/8.9% frequency tuning range. The chip consumes 0.38-2.34-W power (1.18 W at 459-GHz center frequency) from a 1.2-V supply voltage. The circuit provides a maximum of -1.8-dBm radiated power and 19.3-dBm EIRP at 448 GHz using a 12.5-mm radius silicon lens. The minimum measured phase noise at 10-MHz offset is -100.6 dBc/Hz. To the best of our knowledge, this article has the largest EIRP, radiated power, and bandwidth among fully integrated silicon-based coherent sources above 350 GHz.
机译:在本文中,我们介绍了基于耦合驻波振荡器单元的可伸缩结构的438-479-GHz全集成的25元件散热器阵列,而无需额外的损失和辅助网络。使用较少的频移频调谐方法扩展带宽,通过使用所提出的可扩展耦合方法增加阵列的尺寸并使用硅镜头在优化的辐射设置中最大化辐射方向性来提高EIRP。提出了一种分析芯片镜头设置的辐射方向性以及通过最大化方向性来增强EIRP的采用方法。该电路以65nm CMOS处理实现,并测量为具有40.7GHz / 8.9%的频率调谐范围。该芯片从1.2-V电源电压消耗0.38-2.34-W电源(以459-GHz中心频率为1.18W)。电路通过12.5 mm半径硅镜片提供最多-1.8-dBm辐射功率和19.3dBm eirp,在448 GHz下提供19.3-dbm eirp。 10-MHz偏移量下的最小测量阶段噪声为-100.6 dBc / Hz。据我们所知,本文具有最大的EIRP,辐射功率和带宽,在350 GHz以上的基于完全集成的基于硅的相干源之间。

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