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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Modelling and Nonlinear Equalization Technique for a 20 Gb/s 0.77 pJ/b VCSEL Transmitter in 32 nm SOI CMOS
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A Modelling and Nonlinear Equalization Technique for a 20 Gb/s 0.77 pJ/b VCSEL Transmitter in 32 nm SOI CMOS

机译:在32nm SOI CMOS中用于20Gb / s 0.77pJ / b VCSEL发射器的建模和非线性均衡技术

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摘要

This paper describes an ultralow-power VCSEL transmitter in 32 nm SOI CMOS. To increase its power efficiency, the VCSEL is driven at a low bias current. Driving the VCSEL in this condition increases its inherent nonlinearity. Conventional pre-emphasis techniques cannot compensate for this effect because they have a linear response. To overcome this limitation, a nonlinear equalization scheme is proposed. A dynamic VCSEL modelling technique is used to generate the time-domain optical responses for “one” and “zero” bits. Based on the asymmetry of the two responses, the rising and falling edges are equalized separately. Additionally, instead of using fixed bit delays, the equalization delay is selected based on the bias current of the VCSEL. The efficiency of the proposed modelling and equalization technique is evaluated through simulations and measurements. The transmitter achieves energy efficiency of 0.77 pJ/b at 20 Gb/s and occupies active silicon area.
机译:本文介绍了一种32nm SOI CMOS的超低功耗VCSEL发射器。为了提高电源效率,以低偏置电流驱动VCSEL。在这种条件下驱动VCSEL会增加其固有的非线性。传统的预加重技术无法补偿这种影响,因为它们具有线性响应。为了克服这个限制,提出了一种非线性均衡方案。动态VCSEL建模技术用于生成“一个”和“零”位的时域光学响应。基于两个响应的不对称性,分别对上升沿和下降沿进行均衡。另外,不是使用固定的位延迟,而是根据VCSEL的偏置电流选择均衡延迟。通过仿真和测量来评估所提出的建模和均衡技术的效率。该发射器在20 Gb / s时能效达到0.77 pJ / b,并占用了有源硅面积。

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