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首页> 外文期刊>Solid-State Circuits, IEEE Journal of >Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN
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Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

机译:CMOS中的完全集成开关LNA前端IC设计:WLAN的系统方法

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A fully integrated front-end IC is demonstrated for 802.11b/g transceivers with integrated power amplifiers. The SP3T-LNA architecture integrates Bluetooth® functionality with transmit and receive for wireless LAN. The transmit switch achieves a P$_{1{rm dB}}$ greater than 33.0 dBm at 2.5 GHz by employing a cross-biasing approach, transistor stacking and deep n-well process. Power handling techniques used for the switches and the associated performance tradeoffs are discussed. The measured noise figure of the LNA and the receive chain comprising both an LNA and a switch is 1.5 dB and 3.0 dB, respectively. The LNA achieves an IIP3 of 7.0 dBm while consuming 7.0 mA of current. The measured switching times are less than 350 ns. The front-end IC employs a 3.3 V supply and occupies 0.64 mm$^{2}$ in 0.18 $mu$m bulk CMOS technology.
机译:演示了用于集成功率放大器的802.11b / g收发器的完全集成的前端IC。 SP3T-LNA体系结构将Bluetooth®功能与无线LAN的发送和接收集成在一起。通过采用交叉偏置方法,晶体管堆叠和深n阱工艺,发射开关在2.5 GHz时可实现大于33.0 dBm的P $ {{1 {rm dB}} $。讨论了用于开关的功率处理技术以及相关的性能折衷。 LNA和包含LNA和开关的接收链的测量噪声系数分别为1.5 dB和3.0 dB。 LNA达到7.0 dBm的IIP3,同时消耗7.0 mA的电流。测得的开关时间小于350 ns。前端IC采用3.3 V电源,在0.18μm批量CMOS技术中占0.64 mm $ {{2} $”。

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