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Identification and analysis of partial shading breakdown sites in CuIn_xGa_((1-x))Se_2 modules

机译:CuIn_xGa _((1-x))Se_2模块中部分阴影击穿部位的识别和分析

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In this study, CuInxGa(1-x)Se2 (CIGS) mini-modules are stressed under reverse bias, resembling partial shading conditions, to predict and characterize where failures occur. Partial shading can cause permanent damage in the form of 'wormlike' defects on thin-film modules due to thermal runaway. This results in module-scale power losses. We have used dark lock-in thermography (DLIT) to spatially observe localized heating when reverse-bias breakdown occurs on various CIGS mini-modules. For better understanding of how and where these defects originated and propagated, we have developed techniques where the current is limited during reverse-bias stressing. This allows for DLIT-based detection and detailed studying of the region where breakdown is initiated before thermal runaway leads to permanent damage. Statistics of breakdown sites using current-limited conditions has allowed for reasonable identification of the as-grown defects where permanent breakdown will likely originate. Scanning electron microscope results and wormlike defect analysis show that breakdown originates in defects such as small pits, craters, or cracks in the CIGS layer, and the wormlike defects propagate near the top CIGS interface.
机译:在这项研究中,CuInxGa(1-x)Se2(CIGS)微型模块在反向偏置(类似于部分阴影条件)下受到应力,以预测和表征发生故障的位置。由于热失控,部分阴影会导致薄膜模块上的“蠕虫状”缺陷形式的永久损坏。这导致模块级功耗。当各种CIGS微型模块发生反向偏置击穿时,我们已经使用暗锁定热成像(DLIT)来空间观察局部加热。为了更好地了解这些缺陷的产生方式和传播方式,在何处传播,我们开发了在反向偏置应力期间电流受限制的技术。这样可以进行基于DLIT的检测,并详细研究在热失控导致永久性损坏之前引发击穿的区域。使用限流条件对击穿部位进行统计,可以合理地识别可能会造成永久击穿的生长缺陷。扫描电子显微镜结果和蠕虫状缺陷分析表明,击穿起源于缺陷,例如CIGS层中的小凹坑,凹坑或裂纹,并且蠕虫状缺陷在CIGS顶部界面附近传播。

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